The third-generation semiconductor materials are represented by silicon carbide (SiC) and gallium nitride (GaN). They have outstanding performance in the conversion of electricity and light, and are more efficient in microwave signal output. They can be widely used in lighting, display, and communications. field.

Power semiconductors are the core of electrical energy conversion and circuit control in electronic devices. Power semiconductors are mainly used to change the voltage and frequency, DC and AC conversion in electronic devices. They are the core of power conversion and circuit control in electronic devices. They can generally be divided into two categories: power ICs and power discrete devices. Power discrete devices mainly include Products such as diodes, thyristors, and transistors can be divided into IGBTs, MOSFETs, and bipolar transistors.

Power semiconductors first appeared in the 1950s. In 1956, Bell Laboratories in the United States invented thyristors and they were widely used in the 1960s. After 1980, various new power thyristors, unipolar MOSFETs, and bipolar MOSFETs were gradually developed; in the 1990s IGBTs were developed, and power modules and integrated power devices gradually appeared thereafter.